According to the latest report, Samsung Electronics is planning to catch up with the world’s largest foundry company, TSMC, by building a 3-nanometer GAA (Gate-all-around) process in the next three years.
It is reported that GAA is a next-generation process technology that improves the structure of semiconductor transistors so that the gate can contact all four sides of the transistor instead of the three sides of the current FinFET process. The GAA structure can control the current more accurately than the FinFET process.
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According to TrendForce data, in the fourth quarter of 2021, TSMC accounted for 52.1% of the global foundry market, far exceeding Samsung Electronics’ 18.3%. Samsung Electronics is betting on applying GAA technology to the 3-nanometer process to catch up with TSMC.
The South Korean semiconductor giant reportedly used 3-nanometer GAA process wafers for trial production in early June, becoming the first company in the world to use GAA technology. Samsung hopes to quickly narrow the gap with TSMC through technological leaps. The 3nm process improves semiconductor performance and cell efficiency by 15% and 30%, respectively, while reducing chip area by 35% compared to the 5nm process.
After applying GAA technology to its 3-nanometer process in the first half of this year, Samsung plans to introduce it into its second-generation 3-nanometer chips in 2023 and mass-produce GAA-based 2-nanometer chips in 2025. TSMC’s strategy is to use a stable FinFET process to enter the 3nm semiconductor market in the second half of this year, while Samsung Electronics is betting on GAA technology.
Experts say Samsung could be a game-changer in the foundry market if it guarantees stable yields on its GAA-based 3-nanometer process. TSMC is expected to introduce the GAA process starting with 2nm chips and release the first product around 2026. For Samsung Electronics, the next three years will be a critical period.
Recently, Samsung announced that it will invest a total of 450 trillion won in crucial industries such as semiconductors over the next five years. However, Samsung has hit a snag with the 3nm process. Like Samsung, TSMC is having trouble ramping up yields on its 3nm process.
Moreover, TSMC originally planned to use 3nm technology to mass-produce semiconductors for Intel and Apple starting in July but has encountered difficulties ensuring ideal yields. DigiTimes reports that TSMC has struggled to ensure the desired yield of its 3-nanometer process and has therefore revised its technology roadmap several times.
Samsung Electronics is facing a similar situation, with wafers already in use for trial production of the 3nm process, but the company has been delaying announcing official mass production due to low yield issues. “Unless Samsung Electronics secures enough customers for its 7-nm or more advanced process, investors’ anxiety about Samsung Electronics’ future performance may be heightened,” said Roh Keun-chang, head of research at Hyundai Motor Securities.
