According to the latest report, Samsung Electronics announced on its official website on June 30 that they adopted a 3nm process technology with a full-surround gate transistor architecture, and began preliminary production of chips on the same day, prior to TSMC using a 3nm process for foundry wafer.
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It has been a week since Samsung Electronics announced its initial production. The report also gave more information on their 3nm process technology. The latest reports show that the first customer of Samsung Electronics’ 3nm process technology will be a domestic application-specific integrated circuit application company, but they did not disclose the specific name of the company.
The source also mentioned in the report that Qualcomm, the largest customer of Samsung Electronics’ wafer foundry, has also booked the production capacity of the 3nm process. According to the sources, Qualcomm can ask Samsung to use this process to make chips for them at any time, according to the agreement reached by the two companies.
Different from the fin field effect transistor (FinFET) structure used in 7nm, 5nm, and other processes, Samsung Electronics’ 3nm process technology is the first to adopt a full-surround gate transistor structure. Samsung Electronics stated on its official website that compared with the 5nm process, the chips manufactured by their first-generation 3nm process technology have reduced power consumption by 45%, improved performance by 23%, and reduced chip area by 16%.
Samsung Electronics’ competitor TSMC in the foundry field is currently promoting the mass production of the 3nm process. They plan to mass production in the second half of this year. Their 3nm process continues to use the fin field effect transistor architecture.
