Samsung Electronics is also known as the world leader in advanced semiconductor technology. At the 5th annual Samsung Foundry Forum (SFF) in 2021, the company recently confirmed its plan for continuous process technology migration to 3- and 2-nanometer (nm) based on Gate-All-Around (GAA) transistor structure.
Samsung’s unique GAA technology multi-bridge channel FET (MBCFETTM) is essential for continuous process migration with enhanced power, performance, and flexible design capabilities.
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Compared with the 5nm process, the company’s first 3nm GAA process node using MBCFET will allow a 35% reduction in area, a 30% increase in performance, or a 50% reduction in power consumption.
In addition to power, performance, and area (PPA) improvements, with the increase in process maturity, the logic yield of 3nm is approaching a level similar to that of the 4nm process currently in mass production.
According to information, Samsung plans to start producing its customers’ first 3nm-based chip designs in the first half of 2022, and its second-generation 3nm chips are expected to be produced in 2023.
Apart from this, the newly added 2nm process node with MBCFET in Samsung’s technology roadmap is in the early stage of development and will be mass-produced in 2025.
